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2N3719 Datasheet PDF - Microsemi Corporation

Part NameDescriptionManufacturer
2N3719 Silicon PNP Power Transistors Microsemi
Microsemi Corporation Microsemi
Other PDF  no available.
2N3719 Datasheet PDF : 2N3719 pdf   
2N3719 image

DESCRIPTION:
These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.

FEATURES:
• Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719
• DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc
• Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc
• High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)

APPLICATIONS:
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers

 

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