The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 10 µsec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-050 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 50 W MIN. WITH 5.2 dB GAIN