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BFR720L3RH Datasheet PDF - Infineon Technologies

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BFR720L3RH Datasheet PDF : BFR720L3RH pdf     
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Product Brief
The BFR720L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR720L3RH provides a transition frequency fT of 43 GHz and is suited for low voltage applications (VCEO,max = 4 V) from VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR720L3RH is housed in a very thin small leadless package ideal for modules.

• Very low noise figure NFmin = 0.45 dB at 1.9 GHz, 0.65 dB at
   5.5 GHz, 3 V, 4 mA
• High power gain Gms = 21 dB at 5.5 GHz, 13 mA, 3 V
• Very thin small leadless package (height only 0.31 mm), hence
   ideal for modules with compact size and low profile height
• Pb-free (RoHS compliant) and halogen-free package
• Qualification report according to AEC-Q101 available

As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5/3.5/5 GHz, UWB, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier


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