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IS61WV12816DALL Datasheet PDF - Integrated Silicon Solution

Part Name
Description
MFG CO.
IS61WV12816DALL
ISSI
Integrated Silicon Solution ISSI
Other PDF
  2008  
PDF
IS61WV12816DALL Datasheet PDF : IS61WV12816DALL pdf     
IS61WV12816DALL image

DESCRIPTION
TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
HIGH SPEED: (IS61/64WV12816DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 μW (typical) CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 μW (typical) CMOS standby
• Single power supply
    — VDD 1.65V to 2.2V (IS61WV12816DAxx)
    — VDD 2.4V to 3.6V (IS61/64WV12816DBxx)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available

 

Part Name
Description
PDF
MFG CO.
128K X 16 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
128K x 8 Bit High-Speed CMOS Static RAM
Samsung
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
HIGH-SPEED 128K x 8 DUAL-PORT STATIC RAM
Integrated Device Technology
65536-word × 16-bit High Speed CMOS Static RAM
Sony Semiconductor

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