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STD4NB25 Datasheet PDF - STMicroelectronics

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MFG CO.
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STD4NB25 Datasheet PDF : STD4NB25 pdf     
STD4NB25 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

ν TYPICAL RDS(on) = 0.95 Ω
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν VERY LOW INTRINSIC CAPACITANCES
ν GATE CHARGE MINIMIZED
ν FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
ν SWITCH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

 

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