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STP60NE06L-16 Datasheet PDF - STMicroelectronics

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MFG CO.
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STP60NE06L-16 Datasheet PDF : STP60NE06L-16 pdf     
STP60NE06L-16 image

DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.014 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175 °C OPERATING TEMPERATURE
■ LOW THRESHOLD DRIVE

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

 

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