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Description
The IRSF3021 Lamp and DC Motor Driver is a fully Protected three terminal monolithic SMART Power MOSFET that features current limiting, over-temperature protection, gate-to-source ESD protection and gate-to-drain clamp for over-voltage protection.
The on-chip protection circuit limits the drain current in the on-state. The over-temperature circuitry turns off the Power MOSFET when the junction temperature exceeds 165°C. The device restarts automatically once it has cooled down below the reset temperature.
The IRSF3021 is specifically designed for driving loads that require overload protection and in-rush current control while operating in automotive and industrial environments. Targeted applications include resistive loads such as lamps or capacitive loads such as airbag squibs and DC motor drives.

Features
■ Controlled Slew Rate Reduces EMI
■ Over Temperature Protection with Auto-Restart
■ Linear Current-Limit Protection
■ Active Drain-to-Source Clamp
■ ESD Protection
■ Compatible with Standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
■ Logic Level Input Threshold

Applications
■ Cabin Lighting
■ Airbag System
■ Programmable Logic Controller
■ DC Motor Drive

Description
These devices are N-channel Zener-Protected Power MOSFETs realized in SuperMESH™ 5, a revolutionary avalanche-rugged very high voltage Power MOSFET technology based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior Power density and high efficiency.

Features
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-Protected

Applications
• Switching applications

General Description:
The IRSF3010 is a three terminal monolithic SMART Power MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections.
The on chip protection circuit latches off the Power MOSFET in case the drain current exceeds 14A (typical) or the junction temperature exceeds 165°C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of Power MOSFET, thus improving its performance during turn off with inductive loads.

Features:
■ Extremely Rugged for Harsh Operating Environments
■ Over Temperature Protection
■ Over Current Protection
■ Active Drain to Source Clamp
■ ESD Protection
■ Compatible with standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
■ Dual set/reset Threshold Input

Applications:
■ DC Motor Drive
■ Solenoid Driver

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE Power SUPPLIE

DESCRIPTION
The LT1161 is a quad high-side gate driver allowing the use of low cost N-channel Power MOSFETs for high-side switching applications. It has four independent switch channels, each containing a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components.

FEATURES
■ Fully Enhances N-Channel MOSFET Switches
■ 8V to 48V Power Supply Range
■ Protected from –15V to 60V Supply Transients
■ Individual Short-Circuit Protection
■ Individual Automatic Restart Timers
■ Programmable Current Limit, Delay Time, and
   Auto-Restart Period
■ Voltage-Limited Gate Drive
■ Defaults to OFF State with Open Input
■ Flowthrough Input to Output Pinout
■ Available in 20-Lead DIP or SOL Package

APPLICATIOUNS
■ Industrial Control
■ Avionics Systems
■ Automotive Switches
■ Stepper Motor and DC Motor Control
■ Electronic Circuit Breaker

Description
These N-channel Zener-Protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior Power density and high efficiency.

• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-Protected

Applications
• Switching applications

Diode Protected P-Channel Engancement Mode MOSFET General Puropse Amplifier/Switch

Description
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections.
The on-chip protection circuit latches off the Power MOSFET in case the drain current exceeds 7A or the junction temperature exceeds 165°C and keeps it off until the input is driven low. The drain-to-source voltage is actively clamped at 55V (typical), prior to the avalanche of Power MOSFET, thus improving its performance during turn-off with inductive loads.
The input current requirements are very low (300µA) which makes the IRSF3011 compatible with most existing designs based on standard Power MOSFETs.

Features
• Extremely Rugged for Harsh Operating Environments
• Over-Temperature Protection
• Over-Current Protection
• Active Drain-to-Source Clamp
• ESD Protection
• Compatible with Standard Power MOSFET
• Low Operating Input Current
• Monolithic Construction

Applications
• Solenoid Driver
• DC Motor Driver

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Features
• Diode Clamp Between Gate and Source
• ESD Protection − HBM 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher RDS(on)
• Internal Series Gate Resistance

Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation

Applications
• Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers

General Description
· LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD Protected discrete N-MOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device.

Features
· Voltage Controlled Small Signal Switch
· N-MOSFET with ESD Gate Protection
· Surface Mount Package
· Ideally Suited for Automated Assembly Processes
· Lead Free By Design/ROHS Compliant (Note 1)
· "Green" Device (Note 2)