The AMS2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power iloss are needed in a very small outline surface mount package.
● 20V/6.0A, RDS(ON) = 22mΩ (Typ.)
@VGS = 10V
● 20V/5.0A, RDS(ON) = 36mΩ
@VGS = 4.5V
● 20V/4.5A, RDS(ON) = 45mΩ
@VGS = 2.5V
● 20V/4.0A, RDS(ON) = 60mΩ
@VGS = 1.8V
● Super high density cell design for
extremely low RDS(ON)
● Exceptional on-resistance and
Maximum DC current capability
● SOT-23-3L package design