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AP9567GM Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part Name
Description
MFG CO.
AP9567GM
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
Other PDF
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PDF
AP9567GM Datasheet PDF : AP9567GM pdf     
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Description:
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=-40V,ID=-7.5A,RDS(ON)<40mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Part Name
Description
PDF
MFG CO.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified

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