Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.
Features and benefits
■ High power gain
■ Excellent ruggedness
■ Easy power control
■ Source on mounting base eliminates DC
isolators, reducing common mode
■ Avionics applications in the 1030 to 1090 MHz frequency range.