N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.
The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.
• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.
• internal matching to achieve an
optimum wideband capability and
high power gain.
• gold metallization ensures