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CEU3100 Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part Name
Description
MFG CO.
CEU3100
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
Other PDF
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CEU3100 Datasheet PDF : CEU3100 pdf     
CEU3100 image

Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.

Features:
1) VDS=30V,ID=55A,RDS(ON)<10mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.

 

Part Name
Description
PDF
MFG CO.
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified

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