datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  ONSEMI  >>> FQD2N60C PDF

FQD2N60C Datasheet PDF - ON Semiconductor

Part Name
Description
MFG CO.
Other PDF
  2017  
PDF
FQD2N60C Datasheet PDF : FQD2N60C pdf     
FQD2N60C image

No description availableMOSFET – N-Channel, QFET 600 V, 1.9 A, 4,7 Ω

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• These Devices are Halid Free and are RoHS Compliant

 

Part Name
Description
PDF
MFG CO.
N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω
Kersemi Electronic Co., Ltd.
N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω
ON Semiconductor
N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω
Unspecified
N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 600 V, 0.30 A, 11.5 Ω
Fairchild Semiconductor
N-Channel QFET MOSFET ( Rev : 2013_03 )
Fairchild Semiconductor
N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3Ω
Fairchild Semiconductor
N-Channel QFET MOSFET 60 V, 52.4 A, 21 mΩ
Fairchild Semiconductor
N-Channel QFET MOSFET
Fairchild Semiconductor

Share Link: 

한국어 简体中文 日本語 русский español

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]