Description
These devices are an N-channel Power MOSFET realized with the latest development of STMicroelectronis unique "single feature size" strip-based process. The resulting transistors show extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
■ Exceptional dv/dt capability
■ Standard threshold drive
■ 100% avalanche tested
Applications
■ Switching application
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