STB6N52K3 Datasheet PDF - STMicroelectronics
Part Name
Description
MFG CO.
STB6N52K3
STMicroelectronics
Other PDF
no available.
PDF
STB6N52K3 Datasheet PDF :
Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
Features
â– 100% avalanche tested
â– Extremely high dv/dt capability
â– Gate charge minimized
â– Very low intrinsic capacitance
â– Improved diode reverse recovery
characteristics
â– Zener-protected
Application
Switching applications
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Part Name
Description
PDF
MFG CO.
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