Features • Plastic package has Underwriters Laboratory Flammability Classificaion 94V-0 • For surface mounted applications • Glass passivated junction • Excellent clamping capability • Low incremental surge resistance • Very fast response time • 400W peak pulse capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% (200W above 91V) • For devices with V(BR)≥10V, ID are typically less than 1.0µA • High temperature soldering guaranteed: 250°C/10 seconds at terminals • Available in unidirectional only
General Description The APL5308/9 series are micropower, low dropout lin ear regulators, which operate from 2.7V to 6V input Voltage and del i ver up to 300mA. Typical dropout Voltage is only 400mV at 300mA l oadi ng. Desi gned for use in battery-powered system, the low 60mA qui escent current makes it an ideal choice. Design with an internal P-channel MOSFET pass transistor, the APL5308/9 maintain a low supply current, independent of the load current and dropout Voltage. Other features include thermal-shutdown p rotection current limit protection to ensure specified output current and controlled short-circuit current . The APL5308/ 9 regulators come in a miniature SOT-23-3, SOT-23-5, and SOT-89 packages.
• Low Quiescent Current : 60mA (No load)
• Low Dropout V oltage : 400mV (@300mA)
• Fixed Output V oltage : 1.5V ~ 4.5V by Step 0.1V Increment
• Stable with Aluminum, T antalum, or Ceramic Capacitors
• No Protection diodes Needed
• Built-in Thermal Protection
• Built-in Current-Limit Protection
• Controlled Short Circuit Current : 50mA
• Fast Transient Response
• Short Setting Time
• SOT-23-3, SOT-23-5, and SOT-89 Packages
Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions
FEATURES • Patented PAR® construction • Available in Unidirectional polarity only • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Typical ID less than 1.0 µA above 10 V rating • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TYPICAL APPLICATIONS Use in sensitive electronics protection against Voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.
General Description The APL5101/2 are micro-power and ultra low dropout linear regulators, which operate from 2V to 6V input Voltage and deliver up to 150mA. Typical dropout Voltage is only 200mV at 150mA loading. Designed for use in battery-powered system, the low 4mA quiescent current makes it an ideal choice. Design with an internal P-channel MOSFET pass transistor, the APL5101/2 maintain a low supply current, independent of the load current and dropout Voltage.
Features • Ultra Low Quiescent Current: 4mA • Ultra Low Dropout Voltage: 200mV@3.3V/150mA • Fixed Output Voltages: 1.2V~3.5V, Steps 100mV · Guaranteed 150mA Output Current • Stable with 1mF Output Capacitor • Ceramic Capacitor can be used • Current-Limit Protection • Controlled Short Circuit Current: 50mA • Build-in Thermal Protection • SOT-23, SOT-23-5, and SOT-89 Packages • Lead Free and Green Devices Available (RoHS Compliant)
Applications • Hand-Held Equipment • RTC or CMOS Backup Power • Battery Powered Equipment
This Schottky barrier diode is designed to realize compact and efficient designs. Two Schottky barrier diodes are incorporated in one SC-59 package. The use of dual Schottky barrier diodes can reduce both system cost and board space. This Schottky barrier diode is AEC-Q101 qualified and PPAP capable for automotive applications.
Features • Series connection of 2 elements in a small-sized package • Small Interterminal Capacitance (C = 0.69 pF typ) • Small Forward Voltage (VF = 0.23 V max) • Pb-Free, Halogen Free and RoHS compliance • AEC-Q101 qualified and PPAP capable
Description Single pole, thermal miniaturised circuit breaker designed for automotive applications. Fits into fuse blocks designed to ISO 8820-3, Type F.
Automatic reset (for DC 12 V only) and open circuit (modified reset to SAE) version optional. Open circuit version ensures contacts staying open as long as power is on. The circuit breaker will reset after the load is removed. Particularly suitable for installation in inaccessible locations.
Typical applications Protection of electrical systems of passenger cars, trucks, buses, watercraft, extra low Voltage wiring systems.
Description and Applications The MA4E2508 SurMountä Anti-Parallel diode Series are Silicon Low, Medium & High barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The “ 0502 ” outline allows for Surface Mount placement and multi- functional polarity orientations. The MA4E2508 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.
Features ● Extremely Low Parasitic Capitance and Inductance ● Surface Mountable in Microwave Circuits, No Wirebonds Required ● Rugged HMIC Construction with Polyimide Scratch Protection ● Reliable, Multilayer Metalization with a Diffusion ● barrier, 100% Stabilization Bake (300°C, 16 hours) ● Lower Susceptibility to ESD Damage
Features • Schottky barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Plastic Material : UL Flammability Classification Rating 94V-0
The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward Voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Features • High Speed Switching ( trr=60ns(Typ.) @ IF=30A ) • Low Forward Voltage( VF=1.5V(Max.) @ IF=30A ) • Avalanche Energy Rated • AEC-Q101 Qualified
Applications • Automotive DCDC converter • Automotive On Board Charger • Switching Power Supply • Power Switching Circuits