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N-Channel 60-V (D-S), 175 °C MOSFET

N-Channel 60-V (D-S), 175 °C MOSFET

N-Channel 60-V (D-S) MOSFET

TrenchFET® Power MOSFETs

Description: P-Channel, 60 V (D-S) MOSFET
Package: SOT-23
Pin Out: Identical

Features
• Data EEPROM internally organized as 128/256 bytes and 16/32 pages × 8 bytes
• Page protection mode, flexible page-by-page hardware write protection
   – Additional protection EEPROM of 16/32 bits, 1 bit per data page
   – Protection setting for each data page by writing its protection bit
   – Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire serial interface bus, I2C-Bus compatible
• Filtered inputs for noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
   – Internal programming voltage
   – Self timed programming cycle including erase
   – Byte-write and page-write programming, between 1 and 8 bytes
   – Typical programming time 5 ms for up to 8 bytes
• High reliability
   – Endurance 106 cycles1)
   – Data retention 40 years1)
   – ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available for extended temperature ranges
   – Industrial: − 40 °C to + 85 °C
   – Automotive: − 40 °C to + 125 °C

N-Channel 60-V (D-S) 175°C MOSFET

175 °C Rated Maximum Junction Temperature

Features
• Data EEPROM internally organized as 128/256 bytes and 16/32 pages × 8 bytes
• Page protection mode, flexible page-by-page hardware write protection
   – Additional protection EEPROM of 16/32 bits, 1 bit per data page
   – Protection setting for each data page by writing its protection bit
   – Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire serial interface bus, I2C-Bus compatible
• Filtered inputs for noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
   – Internal programming voltage
   – Self timed programming cycle including erase
   – Byte-write and page-write programming, between 1 and 8 bytes
   – Typical programming time 5 ms for up to 8 bytes
• High reliability
   – Endurance 106 cycles1)
   – Data retention 40 years1)
   – ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available for extended temperature ranges
   – Industrial: − 40 °C to + 85 °C
   – Automotive: − 40 °C to + 125 °C

P-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free

• TrenchFET® Power MOSFET



APPLICATIONS

• Load Switch

Features
• Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages × 16 bytes
• Page protection mode, flexible page-by-page hardware write protection
    – Additional protection EEPROM of 64/128 bits, 1 bit per data page
    – Protection setting for each data page by writing its protection bit
    – Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire serial interface bus, I2C-Bus compatible
• Filtered inputs for noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
    – Internal programming voltage
    – Self timed programming cycle including erase
    – Byte-write and page-write programming, between 1 and 16 bytes
    – Typical programming time 5 ms for up to 16 bytes
• High reliability
    – Endurance 106 cycles1)
    – Data retention 40 years1)
    – ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available for extended temperature ranges
    – Industrial: − 40 °C to + 85 °C
    – Automotive: − 40°C to + 125 °C

N-Channel 60-V (D-S) 175°C MOSFET

175°C Rated Maximum Junction Temperature
TranchFET® Power MOSFETs