Vz Range 2.4 to 75V
Power Dissipation 300mW
Features
• SILICON PLANAR Power ZENER DIODEs
• The ZENER voltages are graded according to the international E 24 standard. Standard ZENER voltage tolerance is ±5%. Replace “C” with “B” for ±2% tolerance. Other voltage tolerances and other ZENER voltages are available upon request.
• These DIODEs are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual ZENER DIODE common anode configuration in the SOT-23 case with type designation AZ23 series and the dual ZENER DIODE common cathode configuration in the SOT-23 case with type designation DZ23 series.
Vz Range 2.4 to 75V
Power Dissipation 300mW
Features
• SILICON PLANAR Power ZENER DIODEs
• The ZENER voltages are graded according to the international E 24 standard. Standard ZENER voltage tolerance is ±5%. Replace “C” with “B” for ±2% tolerance. Other voltage tolerances and other ZENER voltages are available upon request.
• These DIODEs are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual ZENER DIODE common anode configuration in the SOT-23 case with type designation AZ23 series and the dual ZENER DIODE common cathode configuration in the SOT-23 case with type designation DZ23 series.
FEATURES
♦ SILICON PLANAR Power ZENER DIODEs
♦ The ZENER voltages are graded according to the international E 24 standard. Standard ZENER voltage tolerance is ±5%. Replace suffix “C” with “B” for ±2% tolerance. Other tolerances and other ZENER voltages are available upon request.
♦ These DIODEs are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual ZENER DIODE common anode configuration in the SOT-23 case with type designation AZ23 series and the dual ZENER DIODE common cathode configuration in the SOT-23 case with type designation DZ23 series.
GENERAL DESCRIPTION
Littefuse PolyZen devices are polymer-enhanced, precision ZENER DIODE micro-assemblies. They offer resettable protection against multi-Watt fault events and spare the need for large heavy heat sinks.
A unique feature of the PolyZen micro-assembly is that the ZENER DIODE is thermally coupled to a resistively non-linear, polymer PTC (Positive Temperature Coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the DIODE clamped VOUT.
This polymer PTC layer responds to either extended DIODE heating or overcurrent events by transitioning from a low to high resistance state, also known as “tripping”. A tripped PTC will limit current and generate voltage drop. It helps to protect both the ZENER DIODE and the follow-on electronics and effectively increases the DIODE’s power handling capability.
FEATURES
• Overvoltage transient suppression
• Stable VZ vs fault current
• Time delayed, overvoltage trip
• Time delayed, reverse bias trip
• Multi-Watt power handling capability
• Integrated device construction
• RoHS Compliant and Halogen Free
BENEFITS
• Stable ZENER DIODE helps shield
downstream electronics from
overvoltage and reverse bias
• Trip events shut out overvoltage and
reverse bias sources
• Analog nature of trip events minimizes
upstream inductive spikes
• Minimal power dissipation requirements
• Single component placement
TARGET APPLICATIONS
• DC power port protection in portable
electronics
• DC power port protection for systems
using
barrel jacks for power input
• Internal overvoltage & transient
suppression
• DC output voltage regulation
SILICON PLANAR POWER ZENER DIODES
Features
SILICON PLANAR Power ZENER DIODEs
for use in stabilizing and clipping circuits with high power rating.
The ZENER voltages are graded according to the international E 24 standard.
Other voltage tolerances and higher ZENER voltages upon request.
FEATURES
• These DIODEs are also available in other case
styles and other configurations including: the
SOD-123 case with type designation BZT52
series, the ZENER DIODE common anode
configuration in the SOT-23 case with type
designation AZ23 series and the ZENER DIODE
common cathode configuration in the SOT-23 case with
type designation DZ23 series
• The ZENER voltages are graded according to the
international E 24 standard. Standard ZENER voltage
tolerance is ± 5 %. Replace “C” with “B” for 2 % tolerance.
• SILICON PLANAR power ZENER DIODEs
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Features
• These DIODEs are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual ZENER DIODE common anode configuration in the SOT-23 case with type designation AZ23 series and the dual ZENER DIODE common cathode configuration in the SOT-23 case with type designation DZ23 series.
• The ZENER voltages are graded according to the international E 24 standard. Standard ZENER voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.
• SILICON PLANAR Power ZENER DIODEs
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
GENERAL DESCRIPTION
TE Circuit Protection PolyZen devices are polymer enhanced, precision ZENER DIODE micro-assemblies. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks.
The ZENER DIODE used for voltage clamping in a PolyZen micro-assembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and DIODE currents are large.
An advanced feature of the PolyZen micro-assembly is that the ZENER DIODE is thermally coupled to a resistively non-linear, polymer PTC (positive temperature coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the DIODE clamped VOUT.
FEATURES
• Overvoltage transient suppression
• Stable VZ vs fault current
• Time delayed, overvoltage trip
• Time delayed, reverse bias trip
• Multi-Watt power handling capability
• Integrated device construction
• RoHS Compliant
BENEFITS
• Stable ZENER DIODE helps shield downstream
electronics from overvoltage and reverse bias
• Trip events shut out overvoltage and reverse bias
sources
• Analog nature of trip events minimizes upstream
inductive spikes
• Minimal power dissipation requirements
• Single component placement
TARGET APPLICATIONS
• DC power port protection in portable electronics
• DC power port protection for systems using
barrel jacks for power input
• Internal overvoltage & transient suppression
• DC output voltage regulation
• Tablet PCs and portable electronics
GENERAL DESCRIPTION
TE Circuit Protection PolyZen devices are polymer enhanced, precision ZENER DIODE micro-assemblies. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks.
The ZENER DIODE used for voltage clamping in a PolyZen microassembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and DIODE currents are large.
An advanced feature of the PolyZen micro-assembly is that the ZENER DIODE is thermally coupled to a resistively non-linear, polymer PTC (positive temperature coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the DIODE clamped VOUT.
FEATURES
• Overvoltage transient suppression
• Stable VZ vs fault current
• Time delayed, overvoltage trip
• Time delayed, reverse bias trip
• Multi-Watt power handling capability
• Integrated device construction
• RoHS Compliant
BENEFITS
• Stable ZENER DIODE helps shield downstream
electronics from overvoltage and reverse bias
• Trip events shut out overvoltage and reverse bias
sources
• Analog nature of trip events minimizes upstream
inductive spikes
• Minimal power dissipation requirements
• Single component placement
TARGET APPLICATIONS
• DC power port protection in portable electronics
• DC power port protection for systems using
barrel jacks for power input
• Internal overvoltage & transient suppression
• DC output voltage regulation
• Tablet PCs and portable electronics
GENERAL DESCRIPTION
TE Circuit Protection PolyZen devices are polymer enhanced, precision ZENER DIODE micro-assemblies. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks.
The ZENER DIODE used for voltage clamping in a PolyZen microassembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and DIODE currents are large.
An advanced feature of the PolyZen micro-assembly is that the ZENER DIODE is thermally coupled to a resistively non-linear, polymer PTC (positive temperature coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the DIODE clamped VOUT.
FEATURES
• Overvoltage transient suppression
• Stable VZ vs fault current
• Time delayed, overvoltage trip
• Time delayed, reverse bias trip
• Multi-Watt power handling capability
• Integrated device construction
• RoHS Compliant
BENEFITS
• Stable ZENER DIODE helps shield downstream
electronics from overvoltage and reverse bias
• Trip events shut out overvoltage and reverse bias
sources
• Analog nature of trip events minimizes upstream
inductive spikes
• Minimal power dissipation requirements
• Single component placement
TARGET APPLICATIONS
• DC power port protection in portable electronics
• DC power port protection for systems using
barrel jacks for power input
• Internal overvoltage & transient suppression
• DC output voltage regulation
• Tablet PCs and portable electronics
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